Methods of forming low interface resistance rare earth metal contacts and structures formed thereby

摘要

Methods and associated structures of forming a microelectronic device are described. Those methods may include forming a contact opening in an inter layer dielectric (ILD) disposed on a substrate, wherein a source/drain contact area is exposed, forming a rare earth metal layer on the source/drain contact area, forming a transition metal layer on the rare earth metal layer; and annealing the rare earth metal layer and the transition metal layer to form a metal silicide stack structure.