发明名称 |
RESISTANCE-VARIABLE MEMORY DEVICE INCLUDING CARBIDE-BASED SOLID ELECTROLYTE MEMBRANE AND MANUFACTURING METHOD THEREOF |
摘要 |
Disclosed are a resistance-variable memory device including a carbide-based solid electrolyte membrane that has stable memory at a high temperature and a manufacturing method thereof. The resistance-variable memory device includes: a lower electrode, the carbide-based solid electrolyte membrane arranged on the lower electrode, and an upper electrode arranged on the solid electrolyte membrane. In addition, the method for manufacturing the resistance-variable memory device comprises: a step for forming the lower electrode on a substrate, a step for forming the carbide-based solid electrolyte membrane on the lower electrode, and a step for forming the upper electrode on the solid electrolyte membrane. |
申请公布号 |
WO2010036001(A3) |
申请公布日期 |
2010.06.24 |
申请号 |
WO2009KR05379 |
申请日期 |
2009.09.22 |
申请人 |
GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY;HWANG, HYUN-SANG;PYUN, MYEONG-BUM |
发明人 |
HWANG, HYUN-SANG;PYUN, MYEONG-BUM |
分类号 |
H01L27/115 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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