| 摘要 |
<p>Provided is a method for manufacturing an optical matrix device, wherein an interface between a semiconductor film and a gate insulating film is not contaminated by forming, in vacuum, the semiconductor film and the gate insulating film by which the characteristics of a thin film transistor are most affected (S12, S13). Though the semiconductor film and the gate insulating film are formed in vacuum, wiring may not be formed in vacuum (S03). Since the semiconductor film and the gate insulating film, which are formed in vacuum, are transferred on the previously formed wiring (S21), the wiring, the semiconductor film and the gate insulating film of the thin film transistor can be efficiently formed even a substrate has a large area.</p> |
