| 发明名称 |
SEMICONDUCTOR APPARATUS AND MANUFACTURING METHOD THEREOF |
| 摘要 |
<p>PURPOSE: A semiconductor apparatus and a manufacturing method of t semiconductor apparatus are provided to improve a retention property by forming a blocking oxidation film of 2nd floor structure including an amorphous layer and a crystalline film. CONSTITUTION: A tunnel oxidation film(111) is formed on a silicon substrate(110). A charge trap film(112) is formed on the tunnel oxidation film. A blocking oxidation film(113) is formed on the charge trap film. A gate electrode(114) is formed on the blocking oxidation film. The blocking oxide film includes a crystalline film(113a) and an amorphous film(113b).</p> |
| 申请公布号 |
KR20100069560(A) |
申请公布日期 |
2010.06.24 |
| 申请号 |
KR20090094569 |
申请日期 |
2009.10.06 |
| 申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
AKIYAMA KOJI;HIGASHIJIMA HIROKAZU;OZAKI TETSUSHI;SHIBATA TETSUYA |
| 分类号 |
H01L21/8247;H01L27/115 |
主分类号 |
H01L21/8247 |
| 代理机构 |
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