| 摘要 |
PURPOSE: A method for fabricating a color filter for an image sensor is provided to improve the reliability of the image sensor by coating a color filter layer on a semiconductor substrate with an optimized coating revolution per minute(RPM) in order to reduce oblique-defects. CONSTITUTION: A photo diode and a plurality of transistors are formed on a semiconductor substrate. A metal wiring layer including a metal wiring is formed on the semiconductor substrate. A protective film is formed on the metal wiring layer. A color filter layer is formed on the protective film. The color filter layer formation process is performed under a condition in which the spin coating RPM of a green color filter resist is higher than the spin coating RPM of a blue color or a red color filter resists.
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