| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing an epitaxial wafer in which dislocation at a contact part between the epitaxial wafer and a susceptor can be suppressed, or the like. SOLUTION: The method of manufacturing the epitaxial wafer 12 in which an epitaxial layer is grown over a main surface of a silicon wafer substrate placed substantially horizontally on the susceptor includes: a growing step of the epitaxial layer; and a cooling step of cooling the epitaxial wafer 12 having the epitaxial layer. The cooling step includes: a wafer measurement step of measuring a temperature of an outer periphery of the epitaxial wafer; a susceptor measurement step of measuring a temperature of the susceptor 14; and a control step of controlling a heater 16 capable of heating at least the susceptor or the epitaxial wafer such that difference between the temperature of the outer periphery and the temperature of the susceptor is within a predetermined range. COPYRIGHT: (C)2010,JPO&INPIT |
