| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a substrate processing apparatus capable of increasing a time of processing gas contact with a processed substrate such as a wafer to supply a uniform processing gas. Ž<P>SOLUTION: The substrate processing apparatus includes an inner tube 4 housing the substrate, an outer tube 2 surrounding the inner tube, a gas nozzle 8 provided in the inner tube and supplies a gas into the inner tube, a first exhaust port 3 provided to the inner tube at a position opposed to the gas nozzle in a diameter direction so as to discharge the gas to between the inner tube and outer tube, and a second exhaust port 6 provided to the outer tube at a position opposed to the first exhaust port in a diameter direction so as to discharge the gas from between the inner tube and outer tube. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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