发明名称 |
MEMORY DEVICE AND MEMORY PROGRAMMING METHOD |
摘要 |
Provided are memory devices and memory programming methods. A memory device may include a multi-bit cell array including a plurality of multi-bit cells, a programming unit configured to program a first data page in the plurality of multi-bit cells and to program a second data page in the multi-bit cells with the programmed first data page, a first controller configured to divide the multi-bit cells with the programmed first data page into a first group and a second group, and a second controller configured to set a target threshold voltage interval of each of the multi-bit cells included in the first group based on first read voltage levels and the second data page, and to set a target threshold voltage interval of each of the multi-bit cells included in the second group based on second read threshold voltage levels and the second data page. |
申请公布号 |
WO2009139567(A3) |
申请公布日期 |
2010.06.24 |
申请号 |
WO2009KR02487 |
申请日期 |
2009.05.12 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO, KYOUNG LAE;KIM, YONG JUNE;SONG, SEUNG-HWAN;KONG, JUN JIN |
分类号 |
G11C16/04;G06F7/32;G11C16/06 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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