| 摘要 |
<p>The active matrix substrate manufacturing method comprises a pattern formation process in which a laminated structure, which comprises a metal layer to be used as the material for scan signal lines (11), a gate insulating layer (30), and semiconductor layers (31, 33) to be used as transistor materials, is formed on a glass substrate (2), then first photosensitive resin patterns (PR) are formed on said laminated structure, and patterns for the aforementioned laminated structure are selectively formed using said first photosensitive resin patterns (PR); a fluorination process in which the surfaces of the aforementioned first photosensitive resin patterns (PR) are fluorinated by means of dry etching using a fluorine gas; a resin coating process in which areas between the patterns on the aforementioned laminated structure are filled in with a coating type transparent insulating resin (60) by the glass substrate (2) with said transparent insulating resin (60); and a resin removal process in which the aforementioned fluorinated first photosensitive resin patterns (PR) are removed. Thus, in the active matrix substrate manufacturing process, the scan signal line and the semiconductor layer formation processes can be achieved through a single-mask process.</p> |
