发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a technique miniaturizing a standard cell. SOLUTION: A first tap supplies power supply potential Vdd and is formed along a first direction; a second tap supplies power supply potential Vss, is disposed opposite the first tap in a second direction crossing the first direction, and is formed along the first direction; and a standard cell 3 is formed between the first and second taps. A cell height (distance L) between the center of the first tap in the second direction and that of the second tap in the second direction is set at [(integer + 0.5)×wiring pitch of the second layer wiring], or [(integer + 0.25)×the wiring pitch of the second layer wiring]. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010141187(A) 申请公布日期 2010.06.24
申请号 JP20080316965 申请日期 2008.12.12
申请人 RENESAS TECHNOLOGY CORP 发明人 SHIMIZU YOJI
分类号 H01L21/82 主分类号 H01L21/82
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