发明名称 |
Electromagnet array in a sputter reactor |
摘要 |
A multi-step process performed in a plasma sputter chamber including sputter deposition from the target and argon sputter etching of the substrate. The chamber includes a quadruple electromagnetic coil array coaxially arranged in a rectangular array about a chamber axis outside the sidewalls of a plasma sputter reactor in back of an RF coil within the chamber. The coil currents can be separately controlled to produce different magnetic field distributions, for example, between a sputter deposition mode in which the sputter target is powered to sputter target material onto a wafer and a sputter etch mode in which the RF coil supports the argon sputtering plasma. A TaN/Ta barrier is first sputter deposited with high target power and wafer bias. Argon etching is performed with even higher wafer bias. A flash step is applied with reduced target power and wafer bias.
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申请公布号 |
US2010155223(A1) |
申请公布日期 |
2010.06.24 |
申请号 |
US20100695643 |
申请日期 |
2010.01.28 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
GUNG TZA-JING;FU XINYU;SUNDARRAJAN ARVIND;HAMMOND, IV EDWARD P.;GOPALRAJA PRABURAM;FORSTER JOHN C.;PERRIN MARK A.;GILLARD ANDREW S. |
分类号 |
C23C14/32;C23C14/04;C23C14/06;C23C14/16;C23C14/35;C23C16/00;C23F1/02;C23F4/00;H01J37/32;H01J37/34;H01L21/285;H01L21/768 |
主分类号 |
C23C14/32 |
代理机构 |
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代理人 |
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地址 |
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