发明名称 |
MAGNETRON SPUTTERING APPARATUS, AND MAGNETRON SPUTTERING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a magnetron sputtering apparatus, and a magnetron sputtering method by which the distribution of film thickness can easily be controlled by using a blocking body. SOLUTION: The magnetron sputtering apparatus comprises: a substrate holding unit 11; a magnet 13 which is rotatably provided facing an opposing surface of a sputtered surface 12a of a plate-like target 12 provided facing the substrate holding unit 11, generates the electron orbit 20 having a center C2 at the position offset with respect to the center C1 of rotation in a vicinity of the sputtered surface 12a; and the blocking body 14 which is provided between a target 12 and a substrate 10 and rotated synchronously with the magnet 13 without changing the relative position to the electron orbit 20 while blocking a part of the electron orbit 20 in plan view of the target 12 from the substrate 10 side. COPYRIGHT: (C)2010,JPO&INPIT
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申请公布号 |
JP2010138423(A) |
申请公布日期 |
2010.06.24 |
申请号 |
JP20080313082 |
申请日期 |
2008.12.09 |
申请人 |
SHIBAURA MECHATRONICS CORP |
发明人 |
KAMO KATSUNAO |
分类号 |
C23C14/54;C23C14/34;C23C14/35;H01L21/203;H01L21/285 |
主分类号 |
C23C14/54 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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