发明名称 MAGNETRON SPUTTERING APPARATUS, AND MAGNETRON SPUTTERING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a magnetron sputtering apparatus, and a magnetron sputtering method by which the distribution of film thickness can easily be controlled by using a blocking body. SOLUTION: The magnetron sputtering apparatus comprises: a substrate holding unit 11; a magnet 13 which is rotatably provided facing an opposing surface of a sputtered surface 12a of a plate-like target 12 provided facing the substrate holding unit 11, generates the electron orbit 20 having a center C2 at the position offset with respect to the center C1 of rotation in a vicinity of the sputtered surface 12a; and the blocking body 14 which is provided between a target 12 and a substrate 10 and rotated synchronously with the magnet 13 without changing the relative position to the electron orbit 20 while blocking a part of the electron orbit 20 in plan view of the target 12 from the substrate 10 side. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010138423(A) 申请公布日期 2010.06.24
申请号 JP20080313082 申请日期 2008.12.09
申请人 SHIBAURA MECHATRONICS CORP 发明人 KAMO KATSUNAO
分类号 C23C14/54;C23C14/34;C23C14/35;H01L21/203;H01L21/285 主分类号 C23C14/54
代理机构 代理人
主权项
地址