发明名称 SINGLE DIE OUTPUT POWER STAGE USING TRENCH-GATE LOW-SIDE AND LDMOS HIGH-SIDE MOSFETS, STRUCTURE AND METHOD
摘要 A voltage converter includes an output circuit having a high-side device and a low-side device which can be formed on a single die (a “PowerDie”). The high-side device can include a lateral diffused metal oxide semiconductor (LDMOS) while the low-side device can include a trench-gate vertical diffused metal oxide semiconductor (VDMOS). The voltage converter can further include a controller circuit on a different die which can be electrically coupled to, and co-packaged with the output circuit.
申请公布号 US2010155837(A1) 申请公布日期 2010.06.24
申请号 US20090471911 申请日期 2009.05.26
申请人 HEBERT FRANCOIS 发明人 HEBERT FRANCOIS
分类号 H01L27/088;H01L21/768 主分类号 H01L27/088
代理机构 代理人
主权项
地址