发明名称 |
FIELD-EFFECT SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME |
摘要 |
A semiconductor device comprises a semiconductor layer, a body region of a first conductivity type formed in the semiconductor layer and extending from a first surface of the semiconductor layer, a first region of a second conductivity type formed in the body region, and a second region of the first conductivity type formed in the body region. The first region extends from the first surface of the semiconductor layer and provides a current electrode region of the semiconductor device. The second region surrounds the first region. The doping concentration of the first conductivity type in the second region is greater than a doping concentration of the first conductivity type in the body region.
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申请公布号 |
US2010155828(A1) |
申请公布日期 |
2010.06.24 |
申请号 |
US20100063424 |
申请日期 |
2010.03.09 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
REYNES JEAN-MICHEL;MAJORAL ISABELLE;PUJO JEAN-PIERRE;STEFANOV EVGUENIY |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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