| 摘要 |
A method of manufacturing a semiconductor device may include forming a first oxide film, a nitride film and/or a second oxide film over a substrate, and may include forming a trench over a semiconductor substrate by etching a portion of a first oxide film, a nitride film, a second oxide film and/or a semiconductor substrate. A method of manufacturing a semiconductor device may include performing wet etching to form a divot, which may be performed over a semiconductor substrate having a trench, and/or which may expose a portion of a nitride film. A method of manufacturing a semiconductor device may include removing a second oxide film having a portion thereof etched and a portion of a first oxide film exposed by a divot, while rounding upper edge portions of a trench using a mixed solution of deionized water and HF. A semiconductor device formed by a method is disclosed.
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