METHOD FOR DEPOSITING W THIN FILM

摘要

PURPOSE: A method for depositing a tungsten thin film is provided to regulate the flux of silicon-contained gas and boron-contained gas and the injecting time of the gases using a silicon-boron sacrificial layer for forming a tungsten layer. CONSTITUTION: Silicon-contained gas is deposited on a substrate(S210). The silicon-contained gas is purged with purge gas(S215). A silicon-boron sacrificial layer is formed on the substrate by depositing boron-contained gas on the substrate(S220). The boron-contained gas is purged with the purge gas(S225). A tungsten layer is formed by exposing the silicon-boron sacrificial layer to a precursor containing tungsten(S230). The precursor containing tungsten is purged with the purge gas(S235).