发明名称 |
SUBSTRATE PROCESSING APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To provide the substrate processing apparatus which prevents ununiformity of films of substrates, caused by displacement between an auxiliary support plate made of SiC and a support plate made of Si. SOLUTION: The substrate processing apparatus is equipped with: a reactor which processes a substrate 7; a substrate holder 1 which holds the substrate 7 in the reactor; a ring-shaped support plate 4 provided in the substrate holder 1 and touching the substrate 7; and the auxiliary support plate 3 made of a material different from that of the support plate 4 and mounting the support plate 4, wherein a recess 39 is formed in the backside of the support plate 4 and a protrusion 38 to be fitted in the recess 39 is provided on the auxiliary support plate 3. COPYRIGHT: (C)2010,JPO&INPIT |
申请公布号 |
JP2010141202(A) |
申请公布日期 |
2010.06.24 |
申请号 |
JP20080317228 |
申请日期 |
2008.12.12 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC |
发明人 |
MARUYAMA KUNIO;NAKAMURA IWAO;YAMAZAKI YOSHINOBU;YANAGAWA HIDEHIRO |
分类号 |
H01L21/683;H01L21/22;H01L21/31;H01L21/324 |
主分类号 |
H01L21/683 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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