发明名称 SUBSTRATE PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide the substrate processing apparatus which prevents ununiformity of films of substrates, caused by displacement between an auxiliary support plate made of SiC and a support plate made of Si. SOLUTION: The substrate processing apparatus is equipped with: a reactor which processes a substrate 7; a substrate holder 1 which holds the substrate 7 in the reactor; a ring-shaped support plate 4 provided in the substrate holder 1 and touching the substrate 7; and the auxiliary support plate 3 made of a material different from that of the support plate 4 and mounting the support plate 4, wherein a recess 39 is formed in the backside of the support plate 4 and a protrusion 38 to be fitted in the recess 39 is provided on the auxiliary support plate 3. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010141202(A) 申请公布日期 2010.06.24
申请号 JP20080317228 申请日期 2008.12.12
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 MARUYAMA KUNIO;NAKAMURA IWAO;YAMAZAKI YOSHINOBU;YANAGAWA HIDEHIRO
分类号 H01L21/683;H01L21/22;H01L21/31;H01L21/324 主分类号 H01L21/683
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