| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, which is capable of suppressing formation of a concavity in a center of an intersection portion of grooves and suppressing the reduction in yield of the semiconductor device. SOLUTION: The method for manufacturing a semiconductor device includes: a step of forming a first groove 110 and a second groove 120 crossing the first groove 110 on a substrate 100; a step of burying a film 200 in the first groove 110 and the second groove 120 by performing film formation processing on the substrate 100; and a step of removing the film 200 located on the substrate 100. In the step of forming the first groove 110 and the second groove 120, a projection 140 extending from one corner of an intersection portion 130 between the first groove 110 and the second groove 120 toward the center of the intersection portion 130 in a plan view is formed in the intersection portion 130. COPYRIGHT: (C)2010,JPO&INPIT |
