发明名称 METHOD FOR MANUFACTURING SPUTTERING TARGET FOR EL ELEMENT MANUFACTURE, SPUTTERING TARGET FOR EL ELEMENT MANUFACTURE, EL ELEMENT, AND METHOD FOR MANUFACTURING EL ELEMENT
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a sputtering target for EL element manufacture, which can sufficiently reduce an O content in a light-emitting film. Ž<P>SOLUTION: The method for manufacturing a sputtering target for EL element manufacture includes: a mixing step of obtaining a mixture by mixing at least bivalent-metal sulfide, trivalent metal, and sulfide of a light-emitting center element; a formation step of obtaining moldings by molding the mixture; and a sintering step of obtaining the sputtering target for EL element manufacture by sintering the moldings. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2010140911(A) 申请公布日期 2010.06.24
申请号 JP20100036314 申请日期 2010.02.22
申请人 IFIRE IP CORP 发明人 KATAOKA SHIGEKI;YANO YOSHIHIKO
分类号 H05B33/10;C09K11/08;C23C14/34;H05B33/14 主分类号 H05B33/10
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