发明名称 |
METHOD FOR MANUFACTURING SPUTTERING TARGET FOR EL ELEMENT MANUFACTURE, SPUTTERING TARGET FOR EL ELEMENT MANUFACTURE, EL ELEMENT, AND METHOD FOR MANUFACTURING EL ELEMENT |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a sputtering target for EL element manufacture, which can sufficiently reduce an O content in a light-emitting film. Ž<P>SOLUTION: The method for manufacturing a sputtering target for EL element manufacture includes: a mixing step of obtaining a mixture by mixing at least bivalent-metal sulfide, trivalent metal, and sulfide of a light-emitting center element; a formation step of obtaining moldings by molding the mixture; and a sintering step of obtaining the sputtering target for EL element manufacture by sintering the moldings. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
|
申请公布号 |
JP2010140911(A) |
申请公布日期 |
2010.06.24 |
申请号 |
JP20100036314 |
申请日期 |
2010.02.22 |
申请人 |
IFIRE IP CORP |
发明人 |
KATAOKA SHIGEKI;YANO YOSHIHIKO |
分类号 |
H05B33/10;C09K11/08;C23C14/34;H05B33/14 |
主分类号 |
H05B33/10 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|