| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device constituted by stacking a semiconductor logic circuit chip smaller than a semiconductor memory chip on the semiconductor memory chip by CoC technology, the semiconductor device being made compact on the whole by making each memory chip itself compact. Ž<P>SOLUTION: The semiconductor device includes the semiconductor memory chip which has an external connection terminal, and a first memory terminal and a second memory terminal on a principal surface, the external connection terminal and first memory terminal being electrically connected through a first memory interconnect layer; and the semiconductor logic circuit chip which is smaller than the semiconductor memory chip and has a first logic circuit terminal and a second logic circuit terminal on its principal surface, the semiconductor logic circuit chip being stacked on the semiconductor memory chip so that at least the first memory terminal of the semiconductor memory chip comes into electric contact with the first logic circuit terminal. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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