| 摘要 |
A wafer through-plating through a semiconductor substrate and a method for producing this wafer through-plating. At least one via hole is inserted in the front side of a semiconductor substrate, in this context, in order to form the wafer through-plating using a trench etching process. The semiconductor material of the side wall of the via hole is then porously etched in an electrochemical etching process. A metal is introduced into the via hole in order to produce the electrical contact-making connection. In order to enable the electrical connection from the front side to the back side of the semiconductor substrate, the via hole is opened from the back side, for example, by thinning the semiconductor substrate. This opening may be made, in this context, before or after the metal is introduced into the via hole.
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