| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device and a method of manufacturing the same. Ž<P>SOLUTION: The semiconductor device includes a first insulating layer pattern (first insulating layer 21) formed on a semiconductor substrate 10, a second insulating layer pattern (second insulating layer 22) formed on the first insulating layer pattern and including fluorine, a third insulating layer pattern (third insulating layer 23) formed on the second insulating layer pattern, and a polysilicon layer pattern (polysilicon layer 30) formed on the third insulating layer pattern 23. Fluorine is injected to a nitride layer where data is to be stored in a flash memory element, thereby data retention and reliability are improved without putting an influence upon capacitor characteristics. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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