| 摘要 |
A method of fabricating a neutron detection structure includes temporarily bonding a carrier to a passivated SOI SRAM wafer, removing a first substrate, depositing a conversion layer where at least a portion of the first substrate was removed, permanently bonding a second substrate to the conversion layer, removing the carrier, and providing at least one electrical contact to the device layer. A method of fabricating a neutron detection structure, corresponding to an alternate embodiment, includes temporarily bonding a carrier to a passivated SOI SRAM wafer, removing a first substrate, depositing a conversion layer onto a second substrate, permanently bonding the coated substrate where at least a portion of the first substrate was removed, removing the carrier, and providing at least one electrical contact to the device layer.
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