发明名称 |
METHOD OF MANUFACTURING CRYSTALLINE SILICON SOLAR CELLS WITH IMPROVED SURFACE PASSIVATION |
摘要 |
The present invention provides a method of manufacturing a crystalline silicon solar cell, comprising:—providing a crystalline silicon substrate having a front side and a back side;—forming a thin silicon oxide film on at least one of the front and the back side by soaking the crystalline silicon substrate in a chemical solution;—forming a dielectric coating film on the thin silicon oxide film on at least one of the front and the back side. The thin silicon oxide film may be formed with a thickness of 0.5-10 nm. By forming a oxide layer using a chemical solution, it is possible to form a thin oxide film for surface passivation wherein the relatively low temperature avoids deterioration of the semiconductor layers.
|
申请公布号 |
US2010154883(A1) |
申请公布日期 |
2010.06.24 |
申请号 |
US20070442935 |
申请日期 |
2007.09.20 |
申请人 |
ECN ENERGIEONDERZOEK CENTRUM NEDERLAND |
发明人 |
KOMATSU YUJI;GEERLIGS LAMBERT JOHAN;MIHAILETCHI VALENTIN DAN |
分类号 |
H01L31/0216;C25D7/12;H01L31/18 |
主分类号 |
H01L31/0216 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|