发明名称 METHOD OF MANUFACTURING CRYSTALLINE SILICON SOLAR CELLS WITH IMPROVED SURFACE PASSIVATION
摘要 The present invention provides a method of manufacturing a crystalline silicon solar cell, comprising:—providing a crystalline silicon substrate having a front side and a back side;—forming a thin silicon oxide film on at least one of the front and the back side by soaking the crystalline silicon substrate in a chemical solution;—forming a dielectric coating film on the thin silicon oxide film on at least one of the front and the back side. The thin silicon oxide film may be formed with a thickness of 0.5-10 nm. By forming a oxide layer using a chemical solution, it is possible to form a thin oxide film for surface passivation wherein the relatively low temperature avoids deterioration of the semiconductor layers.
申请公布号 US2010154883(A1) 申请公布日期 2010.06.24
申请号 US20070442935 申请日期 2007.09.20
申请人 ECN ENERGIEONDERZOEK CENTRUM NEDERLAND 发明人 KOMATSU YUJI;GEERLIGS LAMBERT JOHAN;MIHAILETCHI VALENTIN DAN
分类号 H01L31/0216;C25D7/12;H01L31/18 主分类号 H01L31/0216
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