| 摘要 |
A semiconductor device is provided with: a semiconductor substrate of a first conductivity type; and a plurality of semiconductor regions of a second conductivity type, which respectively extend in the row direction or column direction parallel to the first main surface of the semiconductor substrate and are embedded in a plurality of stripe-shaped grooves which are formed by being spaced apart from each other at predetermined intervals in the semiconductor substrate. The semiconductor substrate and the semiconductor regions are depleted due to the fact that depleted layers extending in the direction parallel to the first main surface from a plurality of pn junctions respectively formed by the semiconductor substrate and the semiconductor regions are brought into contact with each other. |
