| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of processing a semiconductor wafer capable of achieving plasma dicing at low cost. SOLUTION: In the process of a semiconductor wafer to divide a semiconductor wafer 1 into semiconductor elements, a sheet-formed support member 54 is attached to a circuit forming surface 1a of the semiconductor wafer 1. After superimposing a bonding layer 48 on a rear surface 1b to form a mask layer 55, while moving a laser beam 6a along a dicing line, a mask pattern for dicing is formed by removing a mask layer 55 of a boundary area 55a separating each semiconductor element and the bonding layer 48 by the laser beam 6a.By performing plasma processing of the semiconductor wafer 1 after forming the mask pattern, the boundary area of the semiconductor wafer 1 is removed by plasma etching and the wafer 1 is divided into each semiconductor element 1c.Therefore, it is possible to form the dicing mask without performing complex process of high process cost to realize plasma dicing at low cost. COPYRIGHT: (C)2008,JPO&INPIT |
