Wet clean compositions for CoWP and porous dielectrics

摘要

The present invention is a formulation for wet clean removal of post etch and ash residue from a semiconductor substrate having a CoWP feature, consisting of;
deionized water;
organic acid;
amine and/or quaternary ammonium hydroxide, and either: (a) the molar ratio of amine and/or quaternary ammonium hydroxide to organic acid provides a pH in the range of 7-14; and/or (b) the formulation includes a corrosion inhibitor and/or oxygen scavenger. A method of using the formulation is also described.