Mask etch plasma reactor with cathode providing a uniform distribution of etch rate,申请号EP20070014341-传众专利搜索

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发明名称	Mask etch plasma reactor with cathode providing a uniform distribution of etch rate
摘要
申请公布号	EP1918978(A3)	申请公布日期	2010.06.23
申请号	EP20070014341	申请日期	2007.07.20
申请人	APPLIED MATERIALS, INC.	发明人	LEWINGTON, RICHARD;GRIMBERGEN, MICHAEL N.;NGUYEN, KHIEM K.;BIVENS, DARIN;CHANDRACHOOD, MADHAVI R.;KUMAR, AJAY
分类号	H01L21/00;H01J37/20;H01J37/32	主分类号	H01L21/00
代理机构		代理人
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