| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for producing a silicon oxide film with which the film having uniform optical constants, such as refractive index, absorption coefficient, etc., can be formed at high deposition rate. <P>SOLUTION: The method for producing the silicon oxide film is performed, with which the silicon oxide film is formed on a substrate by using a sputtering target comprising silicon carbide and silicon with a ratio in number of atoms of C to Si being from 0.5 to 0.95 and carrying out AC sputtering having from 1 to 1000 kHz frequency in an atmosphere containing oxidizing gas. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
