发明名称 Semiconductor device and method of fabricating the same
摘要 Example embodiments relate to a semiconductor device including a fin-type channel region and a method of fabricating the same. The semiconductor device includes a semiconductor substrate, a semiconductor pillar and a contact plug. The semiconductor substrate includes at least one pair of fins used (or functioning) as an active region. The semiconductor pillar may be interposed between portions of the fins to connect the fins. The contact plug may be disposed (or formed) on the semiconductor pillar and electrically connected to top surfaces of the fins.
申请公布号 EP1939942(A3) 申请公布日期 2010.06.23
申请号 EP20070150240 申请日期 2007.12.20
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SONG, SEUNG-HWAN;KIM, SUK-PIL;PARK, YOON-DONG;KIM, WON-JOO;KOO, JUNE-MO;CHO, KYOUNG-LAE;HYUN, JAE-WOONG;BYUN, SUNG-JAE
分类号 H01L29/786;H01L21/336 主分类号 H01L29/786
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