<p>PURPOSE: A method for forming a pattern is provided to reduce the distance between patterns by forming a line pattern through a second exposure process on the space of a pattern formed through a first exposure process. CONSTITUTION: A first resist film(30) is formed by applying a first positive-resist material on a substrate(10). The first resist film is exposed with a high energy ray. The resist film is developed using a developing solution. The first resist film is cross-linked due to the radiation of the high energy ray. A second resist film(50) is formed by applying a second positive-resist material on the substrate on the cross-linked resist film(30a).</p>
