发明名称 Method of manufacturing a magnetoresistive element
摘要 In an MR element, each of a pinned layer and a free layer includes a Heusler alloy layer. The Heusler alloy layer has two surfaces that are quadrilateral in shape and face toward opposite directions. The Heusler alloy layer includes one crystal grain that touches four sides of one of the two surfaces. In a method of manufacturing the MR element, a layered film to be the MR element is formed and patterned, and then heat treatment is performed on the layered film patterned, so that crystal grains included in a film to be the Heusler alloy layer in the layered film grow and one crystal grain that touches four sides of one of the surfaces of the film to be the Heusler alloy layer is thereby formed.
申请公布号 US7739787(B2) 申请公布日期 2010.06.22
申请号 US20070715341 申请日期 2007.03.08
申请人 TDK CORPORATION 发明人 SHIMAZAWA KOJI;TSUCHIYA YOSHIHIRO;MIZUNO TOMOHITO;MIYAUCHI DAISUKE;HARA SHINJI;MACHITA TAKAHIKO
分类号 G11B5/127;H04R31/00 主分类号 G11B5/127
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