| 摘要 |
PURPOSE: A phase change memory device is provided to improve the programming property of a phase change memory cell by generating various types of reset programming currents and supplying them to the phase change memory cell. CONSTITUTION: A plurality of programming current driving units supply a programmed current corresponding to input data to a corresponding phase-change memory cell. A programming current controller is connected to a plurality of programming current driving units and generates the programming current. The first programming current controller(40A) responds to a first write control signal and generates the first bias signal corresponding to a writing control code. A second programming current controller(40B) responds to a second write control signal and outputs a second bias signal of a predetermined level. A current driving unit supplies an operating current to an output terminal for activation period of the first write control signal.
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