发明名称 Magnetoresistance device with a diffusion barrier between a conductor and a magnetoresistance element and method of fabricating the same
摘要 A magnetoresistance device is provided for improving thermal stability of a magnetoresistance element by preventing inter-diffusion between a conductor (such as a via and an interconnection) for connecting the magnetoresistance element to another element and layers constituting the magnetoresistance element. A magnetoresistance device is composed of a magnetoresistance element, a non-magnetic conductor providing electrical connection between the magnetoresistance element to another element, and a diffusion barrier structure disposed between the conductor and the magnetoresistance element, the magnetoresistance element including a free ferromagnetic layer having reversible spontaneous magnetization, a fixed ferromagnetic layer having fixed spontaneous magnetization, and a tunnel dielectric layer disposed between the free and fixed ferroelectric layers.
申请公布号 US7742263(B2) 申请公布日期 2010.06.22
申请号 US20080138158 申请日期 2008.06.12
申请人 NEC CORPORATION 发明人 FUKUMOTO YOSHIYUKI;SHIMURA KEN-ICHI;KAMIJO ATSUSHI
分类号 G11B5/39;H01F10/06;H01F10/32;H01F41/30;H01L43/08 主分类号 G11B5/39
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