发明名称 |
CMP SLURRY HAVING IMPROVED POLISHING SELECTIVITY AND DISPERSION STABILITY |
摘要 |
PURPOSE: CMP slurry is provided to improve polishing speed of a silicone oxide film, to enhance polishing selectivity between the silicon oxide film and a silicon nitride film, and to prevent a filter from being blocked in a filtering process for removing impurities. CONSTITUTION: CMP slurry includes a substance which is selected from a group comprising a pyridine-based compound and a benzoic acid-based compound and a nonionic compound which is selected from a group comprising polyoxypropylene ether and polyoxyethylene oxypropylene copolymer. The nonionic compound is selected from a group comprising a chemical formula 1 or a chemical formula 2. The chemical formula 1 is R(OCHCH_3CH_2)_n-OR and the chemical formula 2 is RO(CH_2CH_2O)_x(CH(CH_3)CH_2O)_y(CH_2CH_2O)_z-OR. In the chemical formula 1, R and R' are a hydrogen or an alkyl group with a carbon number of 1~18.
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申请公布号 |
KR20100067952(A) |
申请公布日期 |
2010.06.22 |
申请号 |
KR20080126563 |
申请日期 |
2008.12.12 |
申请人 |
CHEIL INDUSTRIES INC. |
发明人 |
KIM, TAI YOUNG;CHOUNG, JAE HOON;JUNG, YOUNG CHUL;LEE, IN KYUNG |
分类号 |
C09K3/14 |
主分类号 |
C09K3/14 |
代理机构 |
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主权项 |
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