发明名称 |
Semiconductor film formation device |
摘要 |
A semiconductor film formation device has: a reaction vessel that includes a gas flow path to allow source gas to pass through and a substrate mount site provided in the gas flow path to mount a substrate; a temperature control means that is disposed opposite to the substrate mount site and close to the reaction vessel to control the internal temperature of the reaction vessel; and a thermal conductivity adjusting member that is disposed between the reaction vessel and the temperature control means. The thermal conductivity adjusting member has a section with a thermal conductivity different from the other section along the gas flow path.
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申请公布号 |
US7740703(B2) |
申请公布日期 |
2010.06.22 |
申请号 |
US20040803087 |
申请日期 |
2004.03.18 |
申请人 |
HITACHI CABLE, LTD. |
发明人 |
HASEGAWA MITSURU;MIYAUCHI AKIHIRO;WATANABE KAZUTOSHI;TAKESHI MEGURO |
分类号 |
C23C16/46;C23C16/06;C23C16/22;C23C16/458;C23C16/48;C23C16/52;C30B25/10;C30B25/16;H01L21/205 |
主分类号 |
C23C16/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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