| 摘要 |
PURPOSE: A phase change memory device is provided to change the phase change property of a phase change memory cell of a multi-level by controlling the supply time and size of a programming current. CONSTITUTION: A data write control unit(10) generates a first wire control signal and a second write control signal. A data write controller outputs a write control code in which a code update cycle is controlled by corresponding to an active period of the first write control signal. A data writing unit(20) outputs a programmed current in response to the first and the second write control signal. The data writing unit controls the programming current according to the combination of write control codes which are updated periodically in the action period of the first write control signal. A latch unit stores a plurality of input data in response to an enable signal.
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