发明名称 |
Patterning process and resist composition |
摘要 |
A pattern is formed by applying a positive resist composition comprising a polymer comprising 7-oxanorbornane ring-bearing recurring units and acid labile group-bearing recurring units and an acid generator onto a substrate to form a resist film, heat treating and exposing the resist film to radiation, heat treating and developing the resist film with a developer, and causing the resist film to crosslink and cure with the aid of acid and/or heat. A second resist pattern is then formed in the space area of the first resist pattern. The double patterning process reduces the pitch between patterns to one half.
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申请公布号 |
US7741015(B2) |
申请公布日期 |
2010.06.22 |
申请号 |
US20080029940 |
申请日期 |
2008.02.12 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
HATAKEYAMA JUN;YOSHIHARA TAKAO;KINSHO TAKESHI;HASEGAWA KOJI;KAWAI YOSHIO;TAKEMURA KATSUYA |
分类号 |
G03F7/004;G03F7/30 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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