发明名称 |
Integrated circuit device with temperature monitor members |
摘要 |
In a semiconductor integrated circuit device, a logic circuit section is provided at the top surface of a P-type silicon substrate and a multi-level wiring layer. The device is further provided with a temperature sensor section in which a first temperature monitor member of vanadium oxide is provided above the multi-level wiring layer. A second temperature monitor member of Ti is provided at a lowermost layer of the multi-level wiring layer. The first and second temperature monitor members are connected in series between a ground potential wire and a power-source potential wire, with an output terminal connected to the node of both members. The temperature coefficient of the electric resistivity of the first temperature monitor member is negative, while that of the second temperature monitor member is positive.
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申请公布号 |
US7741692(B2) |
申请公布日期 |
2010.06.22 |
申请号 |
US20050087587 |
申请日期 |
2005.03.24 |
申请人 |
NEC ELECTRONICS CORPORATION;NEC CORPORATION |
发明人 |
OHKUBO HIROAKI;NAKASHIBA YASUTAKA;KAWAHARA NAOYOSHI;MURASE HIROSHI;ODA NAOKI;SASAKI TOKUHITO;ITO NOBUKAZU |
分类号 |
H01L21/3205;H01L31/058;G01K7/01;G01K7/18;G01K7/22;G01K7/42;H01L21/822;H01L21/8234;H01L23/34;H01L23/48;H01L23/52;H01L23/58;H01L27/04;H01L27/06;H01L29/00;H05B1/02 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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