发明名称 Memory device, data recording method, and IC tag
摘要 A memory device includes first electrodes, second electrodes, third electrodes, heaters, and memory cells between the first electrodes and the heaters. Each third electrode is provided on the heaters, and each second electrode is provided at a side portion of the heaters. Each memory cell contains an electroconductive liquid crystal compound having a long linear conjugate structure and exhibiting a smectic phase as a liquid crystal phase. Information can be written in the memory cells by selectively heating the heaters to cause the corresponding memory cells to have both electroconductivity and optical anisotropy.
申请公布号 US7742112(B2) 申请公布日期 2010.06.22
申请号 US20080123750 申请日期 2008.05.20
申请人 YAMANASHI UNIVERSITY;NIPPON CHEMICAL INDUSTRIAL CO., LTD. 发明人 HARAMOTO YUICHIRO;KATO TAKAMASA;HIROSHIMA KOHKI
分类号 G02F1/13;C09K19/02;G02F1/133 主分类号 G02F1/13
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