发明名称 Tunneling magneto-resistive spin valve sensor with novel composite free layer
摘要 The conventional free layer in a TMR read head has been replaced by a composite of two or more magnetic layers, one of which is iron rich The result is an improved device that has a higher MR ratio than prior art devices, while still maintaining free layer softness and acceptable magnetostriction. A process for manufacturing the device is also described.
申请公布号 US7742261(B2) 申请公布日期 2010.06.22
申请号 US20050034114 申请日期 2005.01.12
申请人 HEADWAY TECHNOLOGIES, INC. 发明人 ZHAO TONG;WANG HUI-CHUAN;TORNG CHYU-JIUH
分类号 G11B5/33;G11B5/127 主分类号 G11B5/33
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