发明名称 |
Tunneling magneto-resistive spin valve sensor with novel composite free layer |
摘要 |
The conventional free layer in a TMR read head has been replaced by a composite of two or more magnetic layers, one of which is iron rich The result is an improved device that has a higher MR ratio than prior art devices, while still maintaining free layer softness and acceptable magnetostriction. A process for manufacturing the device is also described.
|
申请公布号 |
US7742261(B2) |
申请公布日期 |
2010.06.22 |
申请号 |
US20050034114 |
申请日期 |
2005.01.12 |
申请人 |
HEADWAY TECHNOLOGIES, INC. |
发明人 |
ZHAO TONG;WANG HUI-CHUAN;TORNG CHYU-JIUH |
分类号 |
G11B5/33;G11B5/127 |
主分类号 |
G11B5/33 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|