METHOD FOR FABRICATING SEMICONDUCTOR DEVICE HAVING THE VERTICAL TRANSISTER

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to reduce manufacturing costs by forming an impurity layer on a semiconductor substrate. CONSTITUTION: An epitaxial layer is formed on a semiconductor substrate(110). A body is formed by etching the epitaxial layer after forming the epitaxial layer with a plurality of impurities by implanting ions. The body is vertical to the semiconductor substrate and includes a storage body(1050) comprised of a plurality of impurity layers and an access body(1070) formed on the storage body. Common lines(200) correspond to the storage body and are arranged while interposing the body. Word lines(400) are formed on the common lines in parallel and correspond to the access body.