| 摘要 |
PURPOSE: A device isolation structure of a semiconductor device and a manufacturing method thereof are provided to simplify manufacturing processes by forming adjacent N and P type impurity areas by doping the impurities on a semiconductor substrate. CONSTITUTION: A first conductive first ion implantation area(20) is formed on a semiconductor substrate(10). A second conductive second ion implantation area(30) is contacted with the first ion implantation area and forms a depletion layer. A first contact electrode(50) is electrically connected to the first ion implantation area. A second contact electrode(60) is electrically connected to the second ion implantation area.
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