发明名称 |
Semiconductor wafer with improved crack protection |
摘要 |
A method of manufacturing a semiconductor wafer for dicing includes providing a semiconductor wafer including a substrate and a plurality of upper layers on the substrate that form a formation of die areas. The formation is arranged so that adjacent die areas are separated by a path for a dicing tool. Within each path, a pair of spaced apart lines is fabricated. Each line defines a dicing edge of a respective path and has at least one trench extending between a top surface of the wafer and the substrate. Each trench is filled with a stress absorbing material for reducing die tool induced stress on the die areas during dicing. |
申请公布号 |
US7741196(B2) |
申请公布日期 |
2010.06.22 |
申请号 |
US20070668453 |
申请日期 |
2007.01.29 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
YIP HENG KEONG;LO WAI YEW;TAN LAN CHU |
分类号 |
H01L21/30 |
主分类号 |
H01L21/30 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|