发明名称 Semiconductor wafer with improved crack protection
摘要 A method of manufacturing a semiconductor wafer for dicing includes providing a semiconductor wafer including a substrate and a plurality of upper layers on the substrate that form a formation of die areas. The formation is arranged so that adjacent die areas are separated by a path for a dicing tool. Within each path, a pair of spaced apart lines is fabricated. Each line defines a dicing edge of a respective path and has at least one trench extending between a top surface of the wafer and the substrate. Each trench is filled with a stress absorbing material for reducing die tool induced stress on the die areas during dicing.
申请公布号 US7741196(B2) 申请公布日期 2010.06.22
申请号 US20070668453 申请日期 2007.01.29
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 YIP HENG KEONG;LO WAI YEW;TAN LAN CHU
分类号 H01L21/30 主分类号 H01L21/30
代理机构 代理人
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