发明名称 Exhaust apparatus configured to reduce particle contamination in a deposition system
摘要 A method and system for vapor deposition on a substrate that disposes a substrate in a process space of a processing system that is isolated from a transfer space of the processing system, processes the substrate at either of a first position or a second position in the process space while maintaining isolation from the transfer space, and deposits a material on said substrate at either the first position or the second position. Furthermore, the system includes a high conductance exhaust apparatus configured to be coupled to the process space, whereby particle contamination of the substrate processed in the deposition system is minimized. The exhaust apparatus comprises a pumping system located above the substrate and an evacuation duct, wherein the evacuation duct has an inlet located below the substrate plane.
申请公布号 US7740705(B2) 申请公布日期 2010.06.22
申请号 US20060369883 申请日期 2006.03.08
申请人 TOKYO ELECTRON LIMITED 发明人 LI YICHENG
分类号 C23C16/505;H01L21/363 主分类号 C23C16/505
代理机构 代理人
主权项
地址