VERTICAL SEMICONDUCTOR LIGHT EMITTING DEVICE WITH ESD PROTECTION

摘要

PURPOSE: A vertical structure semiconductor light emitting device including a static protective function is provided to prevent a damage of the light emitting device in a reverse voltage generation due to a static by simultaneously embodying the light emitting device and a schottky diode using one substrate. CONSTITUTION: A lamination structure(10) includes a first conductive semiconductor layer(11), an active layer(12) and a second conductive semiconductor layer(13). A first ohmic contact layer(14a) is formed on the second conductive semiconductor layer upper side of the first area. A second ohmic contact layer(14b) is formed on a part of the second electrical conductive semiconductor layer upper side of the second area. A middle electrode(15) is electrically isolated with the active layer and the second conductive semiconductor layer. A first electrode(16) is formed on the lower-part of the first conductive semiconductor layer. A second electrode(17) is formed on the first ohmic contact layer.