THIN FILM TRANSISTOR AND DISPLAY DEVICE

摘要

PURPOSE: A thin film transistor and an indicating apparatus are provided to reduce an optical leakage current by shielding with overlapping a semiconductor layer with a gate electrode layer. CONSTITUTION: A gate electrode layer(102) and a semiconductor layer(106) are formed on a substrate(100). A second semiconductor layer(108) is formed on the semiconductor layer. A gate insulating layer(104) is formed between the gate electrode layer and the semiconductor layer. A first dopant semiconductor layer(110) is formed with overlapping on the second semiconductor layer. A second dopant semiconductor layer(111) is formed with overlapping on the first dopant semiconductor layer. A source electrode layer and drain electrode layer(112) are formed with overlapping on the second dopant semiconductor layer.