NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A nitride semiconductor light emitting device and a manufacturing method thereof are provided to enhance a light efficiency of the nitride semiconductor light emitting device with enhancing a current spreading effect by inserting a metal layer of a mesh structure between a transparent conductivity oxide layers. CONSTITUTION: A light emitting structure includes an n-type nitride semiconductor layer(103), an active layer(105) and a p-type nitride semiconductor layer(107) on a substrate with successively forming. A first transparent conductivity oxide layer(109a) is formed on the p-type nitride semiconductor layer. A metal layer(119) of a mesh structure is formed on the first transparent conductivity oxide layer. The second transparent conductivity oxide layer(109b) is formed on the metal layer. The first transparent conductivity oxide layer is grown up by the electronic beam evaporation.