| 摘要 |
PURPOSE: A chemical and mechanical polishing composition and a method for polishing a chemical machine are provided to selectively eliminate a barrier material about interconnect metal and dielectric substances. CONSTITUTION: A chemical and mechanical method for polishing a substrate comprises the following steps; offering the substrate including a barrier material under the presence of interconnect metal or k dielectric material; offering a chemical and mechanical polishing composition including abrasive 1-40 wt%, oxidizing agent 0-10 wt%, quaternary compound 0.001-5 wt%, and a material of a chemical formula (I) and has pH less than 5; offering a chemical and mechanical polishing pad; raising dynamic contact on the interface between the chemical and mechanical polishing pad and the substrate; distributing the chemical and mechanical polishing composition on the interface between the chemical and mechanical polishing pad and the substrate. |
