| 摘要 |
FIELD: physics. ^ SUBSTANCE: invention relates to electronic microwave equipment. The ultra-wideband microwave amplifier has two identical transmission lines, one designed for input and the other for output of a microwave signal, a Schottky-barrier field-effect transistor connected in a common-source circuit and a positive dc voltage source connected to the drain of the Schottky-barrier field-effect transistor. The amplifier also has at least two Schottky-barrier field-effect transistors and at least six inductors, where at least three of them are meant for connecting drains of three Schottky-barrier field-effect transistors and at least three others for earthing common points of adjacent two Schottky-barrier field-effect transistors, where the gate of the first Schottky-barrier field-effect transistor is connected to the transmission line at the input and its drain is connected to the drain of the second Schottky-barrier field-effect transistor through one of the said inductors and to the drain of the third or the next Schottky-barrier field-effect transistor through one of the said inductors, the drain of the third or last Schottky-barrier field-effect transistor is connected to the transmission line at the output through one of the said inductors, the drain of the first Schottky-barrier field-effect transistor is connected to the gate of the second Schottky-barrier field-effect transistor and their common connection point is earthed through one of the said inductors, the source of the second Schottky-barrier field-effect transistor is connected to the gate of the third or next Schottky-barrier field-effect transistor and their common connection point is earthed through one of the said inductors, the source of the third or last Schottky-barrier field-effect transistor is earthed through one of the said inductors. ^ EFFECT: wider operating frequency band of the microwave amplifier with sufficient amplification coefficient level. ^ 3 cl, 3 dwg |
